Anodic wafer bonder
Anodic wafer bonder
[FEATURES]
MEMS application, R&D
4~12inch wafer manual loading
High voltage : 100~1000VDC
High vacuum : < 5x10-6 Torr
(Rotary + Turbo pump)
- 상온, 1시간 pumping
- Turbo pump ultimate pressure
: 7.5x10-8 Torr
High pressure : upto 8,000N
High Temperature : process at ~370℃
Self flatness alignment
; prevent wafer damage
전원 : 단상, 210VAC±10%, 50/60Hz, 4KVA
[Sample test wafers]